Determination of PMMA block semiconductor / Nur Dzaina Zaidel
In this study, the Poly methyl metacrylate (PMMA) block was irradiated using Electron beam accelerator at 50kGY. The band gap energy obtained from this irradiated PMMA sample was 3.4450 eV which fall in the range of most common semiconductor. From the hot probe measurement it was found that this...
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| Main Author: | |
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| Format: | Student Project |
| Language: | English |
| Published: |
Faculty of Applied Sciences
2009
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| Subjects: | |
| Online Access: | http://ir.uitm.edu.my/id/eprint/766/1/PPb_NUR%20DZAINA%20ZAIDEL%20AS%2009_5%20P01.pdf http://ir.uitm.edu.my/id/eprint/766/ |
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| Summary: | In this study, the Poly methyl metacrylate (PMMA) block was irradiated using Electron
beam accelerator at 50kGY. The band gap energy obtained from this irradiated PMMA
sample was 3.4450 eV which fall in the range of most common semiconductor. From the
hot probe measurement it was found that this irradiated PMMA was n-type
semiconductor. Therefore it was can be concluded that the charge carries in this irradiated
system was electrons. These electrons were release from the breaking of –CH bond of the
methylene group –CH2, and the CH3 group of PMMA structure that had been confirmed
from the Fourier Transform Infrared (FTIR) analysis. The decreased in the glass
transition temperature, Tg and the decomposition temperature of the irradiated PMMA
system observed from the Differential Scanning Calorimetry (DSC) and
Thermogravimetric analysis (TGA) thermograms supported the occurrence of bond
breaking.
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