Heterojunction ZnO on silicon for potential UV to visible photodetector utilising SILVACO TCAD effect of thickness and doping / A. Azmi Ahmad ... [et al.]

• Main Authors: Azmi, Azila, Abd Rahim, Alhan Farhanah, Mohd Razali, Nor Shafika, Radzali, Rosfariza, Mahmood, Ainorkhilah, Hamzah, Irni Hamiza, Abdullah, Mohd Hanapiah, Mohamed, Mohamed Fauzi Packeer
• Format: Article
• Language: English
• Published: Universiti Teknologi MARA, Pulau Pinang 2022
• Subjects: TK Electrical engineering. Electronics. Nuclear engineering; Electronics; Pattern recognition systems; Photoelectronic devices (General)
• Online Access: https://ir.uitm.edu.my/id/eprint/68013/1/68013.pdf; https://ir.uitm.edu.my/id/eprint/68013/; https://uppp.uitm.edu.my

In this work, the study of heterojunction Zinc Oxide on Silicon to enhance UV photodetector performance has been conducted. The study was carried out using a SILVACO ATLAS device simulator. There are two parameters studied in this project are: to find the best thickness of ZnO and suitable doping concentration of ZnO on the silicon substrate as a photodetector device. There are three different thicknesses of ZnO (0.5 μm ,1 μm and 2 μm) and four different doping concentrations of ZnO applied (1x1015 cm-3, 1x1019 cm-3, 1x1020 cm-3 and 1x1021 cm-3). The performance of the ZnO on Si as a photodetector was evaluated by dark and photo current-voltage (I-V) characteristics. It was found that the optimum thickness of ZnO is at 1 μm and the suitable doping concentration of ZnO is at 1x1021 cm-3 since with these values, the photocurrent response is high, and in spectral response, the peak value for both is depicted in a visible region, which is suitable as UV photodetector device criteria.