Current reference pierce oscillator circuit topology for low phase noise MEMS SAW oscillator / Fazli Lut, Norlizawati Kamarudin and Jamilah Karim

This paper presents the design and simulation of a current reference Pierce oscillator circuit topology for microelectromechanical systems (MEMS) based oscillator. The designed amplifier achieves a gain of 33 dB at VDD of 1.2V. The amplifier core was tested with surface-acousticwave (SAW) resona...

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Main Authors: Lut, Fazli, Kamarudin, Norlizawati, Karim, Jamilah
Format: Article
Language:English
Published: UiTM Press 2018
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Online Access:https://ir.uitm.edu.my/id/eprint/63054/1/63054.pdf
https://ir.uitm.edu.my/id/eprint/63054/
https://jeesr.uitm.edu.my/v1/
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spelling my.uitm.ir.630542022-06-29T03:58:03Z https://ir.uitm.edu.my/id/eprint/63054/ Current reference pierce oscillator circuit topology for low phase noise MEMS SAW oscillator / Fazli Lut, Norlizawati Kamarudin and Jamilah Karim Lut, Fazli Kamarudin, Norlizawati Karim, Jamilah Applications of electronics This paper presents the design and simulation of a current reference Pierce oscillator circuit topology for microelectromechanical systems (MEMS) based oscillator. The designed amplifier achieves a gain of 33 dB at VDD of 1.2V. The amplifier core was tested with surface-acousticwave (SAW) resonators range from 800MHz to 2.4 GHz to form an oscillator and it shows a phase noise level range of -146 dBc/Hz to -151 dBc/Hz at 100 kHz offset frequency. This satisfies the maximum requirements phase noise of local oscillator (LO) of ultra-high frequency (UHF) for Bluetooth technology and Global System for Mobile Communications (GSM). The device produced a better figure-of-merit (FoM) when compared with other oscillators that were based on CMOS on-chip inductor and capacitor (CMOS LC), film bulk acoustic resonator (FBAR) and lateral-field-excited (LFE) Aluminium Nitride (AIN) contour mode resonators technologies. The oscillator circuit has been simulated using a 0.13µm CL130G CMOS technology process from Silterra (Malaysia) with the oscillator core consuming only 1.07mW DC power. UiTM Press 2018-06 Article PeerReviewed text en https://ir.uitm.edu.my/id/eprint/63054/1/63054.pdf Current reference pierce oscillator circuit topology for low phase noise MEMS SAW oscillator / Fazli Lut, Norlizawati Kamarudin and Jamilah Karim. (2018) Journal of Electrical and Electronic Systems Research (JEESR), 12: 17. pp. 118-122. ISSN 1985-5389 https://jeesr.uitm.edu.my/v1/
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic Applications of electronics
spellingShingle Applications of electronics
Lut, Fazli
Kamarudin, Norlizawati
Karim, Jamilah
Current reference pierce oscillator circuit topology for low phase noise MEMS SAW oscillator / Fazli Lut, Norlizawati Kamarudin and Jamilah Karim
description This paper presents the design and simulation of a current reference Pierce oscillator circuit topology for microelectromechanical systems (MEMS) based oscillator. The designed amplifier achieves a gain of 33 dB at VDD of 1.2V. The amplifier core was tested with surface-acousticwave (SAW) resonators range from 800MHz to 2.4 GHz to form an oscillator and it shows a phase noise level range of -146 dBc/Hz to -151 dBc/Hz at 100 kHz offset frequency. This satisfies the maximum requirements phase noise of local oscillator (LO) of ultra-high frequency (UHF) for Bluetooth technology and Global System for Mobile Communications (GSM). The device produced a better figure-of-merit (FoM) when compared with other oscillators that were based on CMOS on-chip inductor and capacitor (CMOS LC), film bulk acoustic resonator (FBAR) and lateral-field-excited (LFE) Aluminium Nitride (AIN) contour mode resonators technologies. The oscillator circuit has been simulated using a 0.13µm CL130G CMOS technology process from Silterra (Malaysia) with the oscillator core consuming only 1.07mW DC power.
format Article
author Lut, Fazli
Kamarudin, Norlizawati
Karim, Jamilah
author_facet Lut, Fazli
Kamarudin, Norlizawati
Karim, Jamilah
author_sort Lut, Fazli
title Current reference pierce oscillator circuit topology for low phase noise MEMS SAW oscillator / Fazli Lut, Norlizawati Kamarudin and Jamilah Karim
title_short Current reference pierce oscillator circuit topology for low phase noise MEMS SAW oscillator / Fazli Lut, Norlizawati Kamarudin and Jamilah Karim
title_full Current reference pierce oscillator circuit topology for low phase noise MEMS SAW oscillator / Fazli Lut, Norlizawati Kamarudin and Jamilah Karim
title_fullStr Current reference pierce oscillator circuit topology for low phase noise MEMS SAW oscillator / Fazli Lut, Norlizawati Kamarudin and Jamilah Karim
title_full_unstemmed Current reference pierce oscillator circuit topology for low phase noise MEMS SAW oscillator / Fazli Lut, Norlizawati Kamarudin and Jamilah Karim
title_sort current reference pierce oscillator circuit topology for low phase noise mems saw oscillator / fazli lut, norlizawati kamarudin and jamilah karim
publisher UiTM Press
publishDate 2018
url https://ir.uitm.edu.my/id/eprint/63054/1/63054.pdf
https://ir.uitm.edu.my/id/eprint/63054/
https://jeesr.uitm.edu.my/v1/
_version_ 1738514001399119872
score 13.211869