The study of second stage of porous silicon by current density parameter / Nur Sayqira Mohd Amin

• Main Author: Mohd Amin, Nur Sayqira
• Format: Student Project
• Language: English
• Published: 2010
• Subjects: Electric current (General); Semiconductor physics
• Online Access: http://ir.uitm.edu.my/id/eprint/45875/1/45875.pdf; http://ir.uitm.edu.my/id/eprint/45875/

Nowadays, there are many publications contribute with the properties and applications of porous silicon (PSi) which investigated from different aspects. From the theoretical aspect, the repeating etching process will happen at several stages. Several researchers already showed the etching at higher stage will increasing the thickness and the porosity of PSi. A series of porous silicon samples are prepared with different of parameters such as current density and etching time. In this project, the porous silicon was prepared with different current density but the etching time was fixed. The number of sets of porous silicon was produced and characterized by photoluminescence (PL) spectrometer and Atomic Force Microscope (AFM) to identify its optical properties and morphology. In other to determined the present of PSi and the second stage of porous silicon, it was determined based on the PL intensity and the trend of peak of intensity which it returned to initial state certain value of current density. So, the porous silicon was successfully produced and the second stage of porous silicon occurred at 80 mA/cm2.