The effects of P and N scaling on PN-junction characteristic / Ain Zubaidah Maslihan

• المؤلف الرئيسي: Maslihan, Ain Zubaidah
• التنسيق: Student Project
• اللغة: English
• منشور في: 2010
• الموضوعات: Engineering instruments, meters, etc. Industrial instrumentation; Engineering machinery, tools, and implements
• الوصول للمادة أونلاين: https://ir.uitm.edu.my/id/eprint/45052/1/45052.pdf; https://ir.uitm.edu.my/id/eprint/45052/

The wet oxidation process is chosen to grow the oxide layer on the wafer surface. It is because the wet oxidation process has a significantly higher oxidation rate than the dry oxidation process. The n-type wafer was doped with the p-type material semiconductor, which is Boron. The Boron was doped o...