Investigation of doping techniques on the silicon based capacitor: article / Ahmad Akmalhakim Yaacob
This technical paper investigates the effect of doping techniques, type of dopant species and plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers were highly doped using either solid source (SS) or spin-on dopant (SOD) method. Three different diffu...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/105097/1/105097.pdf https://ir.uitm.edu.my/id/eprint/105097/ |
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| Summary: | This technical paper investigates the effect of doping techniques, type of dopant species and plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers were highly doped using either solid source (SS) or spin-on dopant (SOD) method. Three different diffusion temperatures were used in this experiment which are 900oC, 1000oC and 1050oC. Results show that the diffusion by spin-on dopant gives a higher capacitance density compared to diffusion by solid source and larger plate size would contribute to a larger capacitance value. In addition, the experiment also shows that ntype wafer heavily doped with phosphorus exhibits a higher capacitance density. |
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