A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch

• Main Authors: Ma, Li-Ya, Soin, Norhayati, Nordin, Anis Nurashikin
• Format: Conference or Workshop Item
• Language: English; English
• Published: IEEE 2017
• Subjects: T Technology (General)
• Online Access: http://irep.iium.edu.my/61953/1/61953-A%20K-Band%20Switched-Line%20Phase.pdf; http://irep.iium.edu.my/61953/2/61953-A%20K-band%20switched-line%20phase%20shifter-SCOPUS.pdf; http://irep.iium.edu.my/61953/; http://ieeexplore.ieee.org/document/8069125/

—A low-voltage low-loss K-band 3-bit MEMS switched-line phase shifter is presented in this work. The phase shifter is constructed by novel shunt capacitive RF-MEMS switches and coplanar waveguide lines on a high-resistivity silicon substrate. A low-voltage RF-MEMS switch (pull-in voltage = 3.04V) is employed and exhibits good RF characteristics by using T-match technique where its insertion loss and isolation is - 0.1291dB and -28.75dB, respectively at frequency of 20GHz. The 3-bit MEMS phase shifter is assembled by three single-bit units (namely, 45°-bit, 90°-bit and 180°-bit) of switched-line structures; the average phase error and average insertion loss is 0.2445° and -2.447dB, respectively, at 20GHz; its return loss is better than 10dB at a wideband frequency range of up to 20GHz. The whole design area is 6mm*4mm