3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs

• Main Authors: Abubakkar, Sheik Fareed Ookar, Hasbullah, Nurul Fadzlin, Zabah, Nor Farahidah, Abdullah, Yusof
• Format: Conference or Workshop Item
• Language: English; English
• Published: 2014
• Subjects: TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
• Online Access: http://irep.iium.edu.my/46588/1/46588.pdf; http://irep.iium.edu.my/46588/4/46588_electron%20beam%20induced%20threshold%20voltage%20shifts_Scopus.pdf; http://irep.iium.edu.my/46588/; http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7031655

Spacecraft, military mission requires electronic devices that are radiation hardened to extend exposure to ionizing radiation. Among many other semiconductors MOSFET is highly targeted due to its switching and amplifying application in electronics devices. This study investigates threshold voltage s...