Effect of lattice potential upon the surface diffusion of Si on Si(100)

• Main Authors: Ibrahim Ali , Noorbatcha, L.M, Raff, D.L, Thompson
• Format: Article
• Language: English
• Published: American Institute of Physics (AIP) 1985
• Subjects: QD Chemistry
• Online Access: http://irep.iium.edu.my/35142/1/JCP1985_Si%28100%29.pdf; http://irep.iium.edu.my/35142/; http://scitation.aip.org/content/aip/journal/jcp/83/11/10.1063/1.449635

The surfacediffusion of Si atoms on Si(100) is examined using three different lattice potentials suggested by Keating, by Weber, and by Baraff e t a l. Jump frequencies of Si atoms between adjacent adsorbtion sites are computed on each potential surface at 800, 1000, 1200, and 1500 K using classic...