IMPACT OF SCALING TRENDS IN CMOS DEVICES

As the development of a technology, semiconductor needs to be smaller and more advance. According to Moore’s law, the scaling of MOSFETs, which are the key segments in computerized innovation, has changed the semiconductor business and has likewise, empowered the acknowledgment of the hugely unpredi...

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Main Author: SHAFAWIZA, SYAHIRAH
Format: Final Year Project
Language:English
Published: IRC 2019
Online Access:http://utpedia.utp.edu.my/20125/1/Final%20Dissertaion.pdf
http://utpedia.utp.edu.my/20125/
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spelling my-utp-utpedia.201252019-12-20T16:14:09Z http://utpedia.utp.edu.my/20125/ IMPACT OF SCALING TRENDS IN CMOS DEVICES SHAFAWIZA, SYAHIRAH As the development of a technology, semiconductor needs to be smaller and more advance. According to Moore’s law, the scaling of MOSFETs, which are the key segments in computerized innovation, has changed the semiconductor business and has likewise, empowered the acknowledgment of the hugely unpredictable device and frameworks that individuals depend on at present. Unfortunately, as the device scale down, a lot of implication occur such as sub threshold leakage, interconnect delay and gate level radiation hardening. Radiation is one of the most severe problem in CMOS scaling as it will lead to single event effect that consist of soft error and hard error . This project focuses on soft error reduction as itirequiresilessicharge depositionito alterithe valueistored in the amplifier circuit. Softierrors areimainly classifiediinto two types: which are single event transients (SETs) or SEUs.In this work, amplifier are used as a targeted circuit to observe the endurance of the circuit in the radiation hardened and the scaling factor. To reduce the impact of radiation in amplifier this project need to be complete to improve amplifier performance. As the features size of integrated circuit goes down to the nanometer scale,transient and permanent reliability issues are becoming a significant concern foricircuit designers. Traditionally, the reliability issues were mostly handled at the device level as a device engineering problem. However, the increasing severityiof reliability ichallenges and higher error rates due to transient upsets favor higher-level design for reliability. In this work, amplifier circuit will be developed at the circuit level. A major source ofi transient errors is the single event upset (SEU). This study does more research and the result will only base in simulation process. The simulation tool used is Cadence Virtuoso. IRC 2019-01 Final Year Project NonPeerReviewed application/pdf en http://utpedia.utp.edu.my/20125/1/Final%20Dissertaion.pdf SHAFAWIZA, SYAHIRAH (2019) IMPACT OF SCALING TRENDS IN CMOS DEVICES. IRC, Universiti Teknologi PETRONAS. (Submitted)
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Electronic and Digitized Intellectual Asset
url_provider http://utpedia.utp.edu.my/
language English
description As the development of a technology, semiconductor needs to be smaller and more advance. According to Moore’s law, the scaling of MOSFETs, which are the key segments in computerized innovation, has changed the semiconductor business and has likewise, empowered the acknowledgment of the hugely unpredictable device and frameworks that individuals depend on at present. Unfortunately, as the device scale down, a lot of implication occur such as sub threshold leakage, interconnect delay and gate level radiation hardening. Radiation is one of the most severe problem in CMOS scaling as it will lead to single event effect that consist of soft error and hard error . This project focuses on soft error reduction as itirequiresilessicharge depositionito alterithe valueistored in the amplifier circuit. Softierrors areimainly classifiediinto two types: which are single event transients (SETs) or SEUs.In this work, amplifier are used as a targeted circuit to observe the endurance of the circuit in the radiation hardened and the scaling factor. To reduce the impact of radiation in amplifier this project need to be complete to improve amplifier performance. As the features size of integrated circuit goes down to the nanometer scale,transient and permanent reliability issues are becoming a significant concern foricircuit designers. Traditionally, the reliability issues were mostly handled at the device level as a device engineering problem. However, the increasing severityiof reliability ichallenges and higher error rates due to transient upsets favor higher-level design for reliability. In this work, amplifier circuit will be developed at the circuit level. A major source ofi transient errors is the single event upset (SEU). This study does more research and the result will only base in simulation process. The simulation tool used is Cadence Virtuoso.
format Final Year Project
author SHAFAWIZA, SYAHIRAH
spellingShingle SHAFAWIZA, SYAHIRAH
IMPACT OF SCALING TRENDS IN CMOS DEVICES
author_facet SHAFAWIZA, SYAHIRAH
author_sort SHAFAWIZA, SYAHIRAH
title IMPACT OF SCALING TRENDS IN CMOS DEVICES
title_short IMPACT OF SCALING TRENDS IN CMOS DEVICES
title_full IMPACT OF SCALING TRENDS IN CMOS DEVICES
title_fullStr IMPACT OF SCALING TRENDS IN CMOS DEVICES
title_full_unstemmed IMPACT OF SCALING TRENDS IN CMOS DEVICES
title_sort impact of scaling trends in cmos devices
publisher IRC
publishDate 2019
url http://utpedia.utp.edu.my/20125/1/Final%20Dissertaion.pdf
http://utpedia.utp.edu.my/20125/
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score 13.214268