Enhancement of intrinsic carrier concentration in the active layer of solar cell using Indium Nitride quantum dot
This paper presents the improvement of intrinsic carrier concentrations in the active layer of solar cell structure using Indium Nitride quantum dot as the active layer material. We have analyzed effective density of states in conduction band and valance band of the solar cell numerically using S...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.unisza.edu.my/5011/1/FH02-FSTK-15-04484.pdf http://eprints.unisza.edu.my/5011/ |
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| Summary: | This paper presents the improvement of intrinsic carrier concentrations in the active layer
of solar cell structure using Indium Nitride quantum dot as the active layer material. We have
analyzed effective density of states in conduction band and valance band of the solar cell numerically
using Si, Ge and InN quantum dot in the active layer of the solar cell structure in order to improve the
intrinsic carrier concentration within the active layer of the solar cell. Then obtained numerical results
were compared. From the comparison results it has been revealed that the application of InN quantum
dot in the active layer of the device structure improves the effective density of states both in
conduction band and in the valance band. Consiquently the intrinsic carrier concentration has been
improved significently by using InN quantum dot in the solart cell structure. |
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