A Review on modeling the channel potential in multi-gate MOSFETs
This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enabl...
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| Main Authors: | , , |
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| 格式: | Article |
| 语言: | English |
| 出版: |
Universiti Kebangsaan Malaysia
2014
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| 在线阅读: | http://journalarticle.ukm.my/7174/1/07_Hossein_Mohammadi.pdf http://journalarticle.ukm.my/7174/ http://www.ukm.my/jsm/ |
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| 总结: | This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly. |
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