G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation

• Main Authors: D.D. Berhanuddin,, N.E.A. Razak,, Lourenço, M.A., B.Y. Majlis,, Homewood, K.P.
• Format: Article
• Language: English
• Published: Penerbit Universiti Kebangsaan Malaysia 2019
• Online Access: http://journalarticle.ukm.my/13717/1/12%20D.D.%20Berhanuddin.pdf; http://journalarticle.ukm.my/13717/; http://www.ukm.my/jsm/malay_journals/jilid48bil6_2019/KandunganJilid48Bil6_2019.html

The interest in the G-centre is driven by reports that it can lase in silicon. To further this, the transfer of this technology from bulk silicon to a silicon-on-insulator (SOI) platform is an essential requirement to progress to lasing and optical amplification on silicon. We report on the efficien...