Influence of HALO and Source/Drain Implantation on Threshold Voltage in 45nm PMOS Device
In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process paramete...
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| Format: | Article |
| Language: | en |
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International Network for Scientific Information Publication (INSI)
2011
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| Online Access: | http://eprints.utem.edu.my/id/eprint/3797/1/%28J5%29_AJBAS_5%281%29_55-61.pdf http://eprints.utem.edu.my/id/eprint/3797/ http://www.ajbasweb.com/ |
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