Modeling And Analysis Of Lateral Doping Region Translation Variation On Optical Modulator Performance

In this paper, we design and discuss the performance of a silicon phase modulator integrated in a silicon‐on‐insulator (SOI) waveguide. The modulator employing the p‐i‐n diode structure will be working at 1.55 μm optical telecommunications wavelengths. The lateral translation of doping regions of p+...

Full description

Bibliographic Details

Main Authors:	Sahbudin, Saari, Hanim, Abdul Razak, Mardiana, Bidin, Haroon, Hazura, Menon, P.S
Format:	Conference or Workshop Item
Language:	en
Published:	2010
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://eprints.utem.edu.my/id/eprint/13078/1/aip_2010.jpg http://eprints.utem.edu.my/id/eprint/13078/
Tags:	Add Tag No Tags, Be the first to tag this record!