Modeling And Analysis Of Lateral Doping Region Translation Variation On Optical Modulator Performance
In this paper, we design and discuss the performance of a silicon phase modulator integrated in a silicon‐on‐insulator (SOI) waveguide. The modulator employing the p‐i‐n diode structure will be working at 1.55 μm optical telecommunications wavelengths. The lateral translation of doping regions of p+...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/13078/1/aip_2010.jpg http://eprints.utem.edu.my/id/eprint/13078/ |
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