Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate
It is well-known that GaN-on-GaN LEDs have lower dislocation density compared to GaN-on-sapphire LEDs. Nonetheless, the overall efficiency of the GaN-on-GaN LEDs is still lower than the GaN-on-sapphire LEDs. The problem is associated to total internal reflection effect which is higher in the LEDs. T...
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| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48942/1/MNRG_NZ03.pdf http://eprints.usm.my/48942/ |
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