Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique
In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The formation of porous Si-doped GaN by the novel ACPEC is performed in the same electrolyte concentration (4% KOH)...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2017
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48832/1/ZH17_OP07.pdf%20done.pdf http://eprints.usm.my/48832/ |
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