Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator
In recent years, gallium nitride (GaN) films have been widely grown by molecular beam epitaxy (MBE) and metal organic chemical vapour deposition (MOCVD). However, both are expensive techniques and require high maintenance and operation. Therefore, a more simple and cost-effective technique like ele...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48765/1/Section%20C%20161.pdf%20cut.pdf http://eprints.usm.my/48765/ |
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