DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
Gallium nitride is a promising wide bandgap semiconductor material for high-power, high temperature and high frequency device applications. However, there are still a number of factors that are limiting the material to reach a satisfactory device performance. Among them the most important and critic...
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| Format: | Thesis |
| Language: | en |
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2011
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| Online Access: | http://eprints.usm.my/42797/1/TARIQ_MUNIR.pdf http://eprints.usm.my/42797/ |
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