Fabrication of Lateral Polysilicon Gap of Less than 50nm Using Conventional Lithography
We report a thermal oxidation process for the fabrication of nanogaps of less than 50 nmin dimension.Nanogaps of this dimension are necessary to eliminate contributions from double-layer capacitance in the dielectric detection of protein or nucleic acid. The method combines conventional photolitho...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | en |
| Published: |
Hindawi Publishing Corporation
2011
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/39098/1/Fabrication_of_Lateral_Polysilicon_Gap_of_Less_than_50%E2%80%89nm_Using_Conventional_Lithography.pdf http://eprints.usm.my/39098/ https://doi.org/10.1155/2011/250350 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|