Effects Of Thermal Annealing Of Pt Schottky Contacts On n-GaN.
In this paper, the Schottky behavior of Pt contact on n- GaN grown by RF-plasma assisted molecular beam epitaxy was investigated under different annealing temperatures.
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://eprints.usm.my/14832/1/paper8.pdf http://eprints.usm.my/14832/ |
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