Effect of HNO3 Concentration on Etch Rate and Structure of Si Wafer Etched in the Mixture of HF and HNO3 Solutions

The new microelectronic products require the silicon (Si) wafer to be thinned to less than 150 m in thickness. Residual defect on the wafer surface that leads to wafer breakage with a rough surface still be produced by mechanical grinding. Thus, chemical etching method is essentially applied to prod...

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Bibliographic Details

Main Authors:	F. Nurhaziqah K, C. K. Sheng, K. A. M. Amin, M. I. N. Isa, M. F. Hassan, E. A. G. E. Ali, K. H. Kamarudin, R. Aarif
Format:	Article
Language:	en
Published:	Akademi Sains Malaysia 2024
Subjects:	etch rate; silicon; nitric acid; structure; microscope
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