Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe2 interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical r...

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Bibliographic Details
Main Authors: Za�abar F.?., Mahmood Zuhdi A.W., Doroody C., Chelvanathan P., Yusoff Y., Abdullah S.F., Bahrudin M.S., Wan Adini W.S., Ahmad I., Wan Abdullah W.S., Amin N.
Other Authors: 56374530600
Format: Article
Published: MDPI 2024
Subjects:
CIGSe
DC magnetron sputtering
deposition power
energy
molybdenum
molybdenum diselenide (MoSe<sub>2</sub>)
solar cells
Adhesion
Crystal orientation
Glass substrates
Grain boundaries
Molybdenum compounds
Selenium compounds
Surface structure
Thick films
Thin film solar cells
Thin films
Back contact
Contact layers
DC magnetra sputtering
Deposition power
Energy
Magnetron-sputtering
Mo films
Molybdenum diselenide (mose2)
Power
Magnetron sputtering
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