Organic field-effect transistors with reversible threshold voltage shifts for memory element

We introduce an charge-accepting layer on a poly(methyl methacrylate) (PMMA) dielectric to investigate the reversible threshold voltage (V) shifts in all-polymer n-channel organic field-effect transistor (OFET) using an organic semiconductor of an poly{[N,N’-bis(2-octyldodecyl)-naphthalene-1,4,5,8-b...

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Bibliographic Details

Main Authors:	Khairul Anuar Mohamad, Afishah Alias, Ismail Saad, Katsuhiro Uesugi, Hisashi Fukuda
Format:	Article
Language:	en
Published:	United Kingdom Simulation Society 2012
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	https://eprints.ums.edu.my/id/eprint/19675/1/Organic%20field.pdf https://eprints.ums.edu.my/id/eprint/19675/
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