Temperature characteristics of Gate all around nanowire channel Si-TFET
This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
IOP Publishing
2021
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/32198/1/Temperature%20characteristics%20of%20Gate%20all%20around%20nanowire%20channel.pdf http://umpir.ump.edu.my/id/eprint/32198/ https://doi.org/10.1088/1742-6596/1755/1/012045 |
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