ZrO2 thin films on Si substrate

In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO2 (~1.2 nm) unacceptabl...

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Bibliographic Details

Main Authors:	Wong, Y.H., Cheong, K.Y.
Format:	Article
Published:	Kluwer (now part of Springer) 2010
Subjects:	TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery
Online Access:	http://eprints.um.edu.my/12995/ http://link.springer.com/article/10.1007%2Fs10854-010-0144-5 http://dx.doi.org/10.1007/s10854-010-0144-5
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