ZrO2 thin films on Si substrate
In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO2 (~1.2 nm) unacceptabl...
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| Main Authors: | , |
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| Format: | Article |
| Published: |
Kluwer (now part of Springer)
2010
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/12995/ http://link.springer.com/article/10.1007%2Fs10854-010-0144-5 http://dx.doi.org/10.1007/s10854-010-0144-5 |
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