Comparison of single step annealing, double step annealing and multistep annealing for oxide growth on silicon by using dry oxidation techniques / Muhamad Zaki Abdul Khalik
The oxide layer grown on silicon, or silicon dioxide (Si02), was important and played a crucial role in the development of semiconductor fabrication. Thermal oxidation was a method to produce a layer of oxide (usually Si02) on the surface of a wafer. This technique forced an oxidizing agent to diffu...
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| Format: | Student Project |
| Language: | en |
| Published: |
2010
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| Online Access: | https://ir.uitm.edu.my/id/eprint/44533/1/44533.pdf https://ir.uitm.edu.my/id/eprint/44533/ |
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