A study on ZnO/GaN and ZnO/PGaN structures for optoelectronic applications via SILVACO TCAD

The integration of metal oxide materials with semiconductor substrates has emerged as a promising strategy to enhance the performance of optoelectronic devices. However, studies focusing on zinc oxide (ZnO) embedded directly onto porous gallium nitride (PGaN) remain limited. This work aims to invest...

Full description

Bibliographic Details

Main Authors:	Mohd Hassan, Nur Sabrina, Abd Rahim, Alhan Farhanah, Mohd Razali, Nurul Syuhadah, Radzali, Rosfariza, Mahmood, Ainorkhilah, Hamzah, Irni Hamiza, Muhammad, Zuraida, Packeer Mohamed, Mohamed Fauzi
Format:	Article
Language:	en
Published:	Universiti Teknologi MARA Cawangan Pulau Pinang 2025
Subjects:	Photoelectronic devices (General)
Online Access:	https://ir.uitm.edu.my/id/eprint/124804/1/124804.pdf https://ir.uitm.edu.my/id/eprint/124804/ https://uppp.uitm.edu.my
Tags:	Add Tag No Tags, Be the first to tag this record!