Design and simulation of 65nm vertical double gate NMOS using Silvaco TCAD tools / Mohd Ridzuan Mohd Nayin @ Mohd Nayan
This paper has demonstrated structure design and simulating electrical characteristic of Vertical Double Gate n-channel MOSFET (NMOS) using Silvaco TCAD Tools. Objectives of this study are to design 65nm Vertical NMOS, meet the specification provided by International Technology Roadmap Semiconductor...
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| Format: | Thesis |
| Language: | en |
| Published: |
2009
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| Online Access: | https://ir.uitm.edu.my/id/eprint/115427/1/115427.pdf https://ir.uitm.edu.my/id/eprint/115427/ |
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