The Simulation of the Strained Si on Relaxed Si(o.7)Ge(0.3) N-MOS / Mohd Nurul Faizal Jusoh
This project report describes about the design of the strained Si on relaxed Sio jGeo,3 N-MOS semiconductor and to compare the electrical characteristics with the conventional Si N-MOS using a device simulator SILVACO. In the first part, the simulation of basic fabrication processes to create the ma...
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| Format: | Student Project |
| Language: | en |
| Published: |
2006
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| Online Access: | https://ir.uitm.edu.my/id/eprint/103025/1/103025.pdf https://ir.uitm.edu.my/id/eprint/103025/ |
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