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TERNARY LOGIC DESIGN USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS AND RESISTIVE RANDOM ACCESS MEMORY

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Main Author: ZAHOOR, FURQAN
Format: Thesis
Language:English
Published: 2022
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://utpedia.utp.edu.my/id/eprint/31143/1/Furqan%20Zahoor_18000022.pdf
http://utpedia.utp.edu.my/id/eprint/31143/
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id oai:utpedia.utp.edu.my:31143
record_format eprints
spelling oai:utpedia.utp.edu.my:311432025-03-05T00:26:36Z http://utpedia.utp.edu.my/id/eprint/31143/ TERNARY LOGIC DESIGN USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS AND RESISTIVE RANDOM ACCESS MEMORY ZAHOOR, FURQAN TK Electrical engineering. Electronics Nuclear engineering 2022 Thesis NonPeerReviewed text en http://utpedia.utp.edu.my/id/eprint/31143/1/Furqan%20Zahoor_18000022.pdf ZAHOOR, FURQAN (2022) TERNARY LOGIC DESIGN USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS AND RESISTIVE RANDOM ACCESS MEMORY. Doctoral thesis, Universiti Teknologi PETRONAS.
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Electronic and Digitized Intellectual Asset
url_provider http://utpedia.utp.edu.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
ZAHOOR, FURQAN
TERNARY LOGIC DESIGN USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS AND RESISTIVE RANDOM ACCESS MEMORY
format Thesis
author ZAHOOR, FURQAN
author_facet ZAHOOR, FURQAN
author_sort ZAHOOR, FURQAN
title TERNARY LOGIC DESIGN USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS AND RESISTIVE RANDOM ACCESS MEMORY
title_short TERNARY LOGIC DESIGN USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS AND RESISTIVE RANDOM ACCESS MEMORY
title_full TERNARY LOGIC DESIGN USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS AND RESISTIVE RANDOM ACCESS MEMORY
title_fullStr TERNARY LOGIC DESIGN USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS AND RESISTIVE RANDOM ACCESS MEMORY
title_full_unstemmed TERNARY LOGIC DESIGN USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS AND RESISTIVE RANDOM ACCESS MEMORY
title_sort ternary logic design using carbon nanotube field effect transistors and resistive random access memory
publishDate 2022
url http://utpedia.utp.edu.my/id/eprint/31143/1/Furqan%20Zahoor_18000022.pdf
http://utpedia.utp.edu.my/id/eprint/31143/
_version_ 1825812483260022784
score 13.252575

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