Low-voltage CMOS switch for high-speed rail-to-rail sampling

• المؤلفون الرئيسيون: Sarafi, S., Aain, A.K.B., Abbaszadeh, J.
• التنسيق: مقال
• منشور في: Birkhauser Boston 2016
• الموضوعات: TK Electrical engineering. Electronics Nuclear engineering
• الوصول للمادة أونلاين: http://eprints.utm.my/id/eprint/73798/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84958241634&doi=10.1007%2fs00034-015-0101-x&partnerID=40&md5=5700b4503dacf6673b962ef4ba031a73

Sampling switches have a dominant role in switched-capacitor circuits and analog-to-digital convertors. Since they act as input gates, their nonlinearities directly degrade the quality of the input signals. The scaling-down trend of CMOS technology and increasing demands for high-speed and power-efficient circuits pose design challenge in high-speed sampling switches for low-voltage applications. To address this issue, an optimized CMOS switch is proposed in this paper consisting of a bootstrapped NMOS switch and a boosted PMOS switch as a transmission gate. By utilizing this technique, the nonlinearity resulting from the threshold voltage variation (body effect) of NMOS switch is mitigated, considerably.