Rahman, Z. A., & (Advisor), R. M. A. (2008). The study of the effect of MOS transistor scaling on the critical device parameters. Universiti Malaysia Perlis.
Chicago Style CitationRahman, Zazurina Abd, and Ramzan Mat Ayub (Advisor). The Study of the Effect of MOS Transistor Scaling On the Critical Device Parameters. Universiti Malaysia Perlis, 2008.
MLA引文Rahman, Zazurina Abd, and Ramzan Mat Ayub (Advisor). The Study of the Effect of MOS Transistor Scaling On the Critical Device Parameters. Universiti Malaysia Perlis, 2008.
警告:這些引文格式不一定是100%准確.