Rahman, Z. A., & (Advisor), R. M. A. (2008). The study of the effect of MOS transistor scaling on the critical device parameters. Universiti Malaysia Perlis.
استشهاد بنمط شيكاغوRahman, Zazurina Abd, and Ramzan Mat Ayub (Advisor). The Study of the Effect of MOS Transistor Scaling On the Critical Device Parameters. Universiti Malaysia Perlis, 2008.
MLA استشهادRahman, Zazurina Abd, and Ramzan Mat Ayub (Advisor). The Study of the Effect of MOS Transistor Scaling On the Critical Device Parameters. Universiti Malaysia Perlis, 2008.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.