Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD
Hydrogenated amorphous silicon thin films studied in this work were prepared by d.c. and pulsed PECVD technique at a fixe d silane flow-rates of 10 sc cm and 40 sccm. The deposition temperature, pressure and power were fixed at 200 degree Celsius, 0.45 mbar and 1.4 W respectively. The pulsed PECVD s...
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主要な著者: | , , |
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フォーマット: | 論文 |
言語: | English |
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2004
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オンライン・アクセス: | http://eprints.um.edu.my/7345/1/Effects_of_annealing_on_the_electro-optical_properties_of_a-SiH_thin_films_deposited_by_D.C._and_pulsed_PECVD.pdf http://eprints.um.edu.my/7345/ |
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