Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD

• المؤلفون الرئيسيون: Seck, Chai Lim, Boon, Tong Goh, Abdul, Rahman Saadah
• التنسيق: مقال
• اللغة: English
• منشور في: 2004
• الموضوعات: QC Physics
• الوصول للمادة أونلاين: http://eprints.um.edu.my/7345/1/Effects_of_annealing_on_the_electro-optical_properties_of_a-SiH_thin_films_deposited_by_D.C._and_pulsed_PECVD.pdf; http://eprints.um.edu.my/7345/

Hydrogenated amorphous silicon thin films studied in this work were prepared by d.c. and pulsed PECVD technique at a fixe d silane flow-rates of 10 sc cm and 40 sccm. The deposition temperature, pressure and power were fixed at 200 degree Celsius, 0.45 mbar and 1.4 W respectively. The pulsed PECVD s...