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  1. 1
    Improvement of the optical properties of GaN epilayers on Si(111): Impact of GaAs layer thickness on Si and pre‐growth strategy

    Improvement of the optical properties of GaN epilayers on Si(111): Impact of GaAs layer thickness on Si and pre‐growth strategy by Bablu Kumar Ghosh, Akihiro Hashimoto, Akio Yamamoto

    Published 2003
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  2. 2
    Epitaxial growth of semi-polar (11-22) gallium nitride FOR UV photosensing application / Abdullah Haaziq Ahmad Makinudin

    Epitaxial growth of semi-polar (11-22) gallium nitride FOR UV photosensing application / Abdullah Haaziq Ahmad Makinudin by Abdullah Haaziq , Ahmad Makinudin

    Published 2020
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  3. 3
    Optoelectronic properties of improved GaN semiconductor on Si (111) using growth approaches and different interlayer’s

    Optoelectronic properties of improved GaN semiconductor on Si (111) using growth approaches and different interlayer’s by Bablu Kumar Ghosh, Norfarariyanti Parimon, Akio Yamamoto

    Published 2013
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  4. 4
    Formation of air-gap structure at a GaN epilayer/substrate interface by using an InN interlayer

    Formation of air-gap structure at a GaN epilayer/substrate interface by using an InN interlayer by A. Yamamoto, Y. Hamano, T. Tanikawa, Bablu Kumar Ghosh, A. Hashimoto

    Published 2003
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  5. 5
    High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process

    High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process by Kim H., Liu Y., Lu K., Chang C.S., Sung D., Akl M., Qiao K., Kim K.S., Park B.-I., Zhu M., Suh J.M., Kim J., Jeong J., Baek Y., Ji Y.J., Kang S., Lee S., Han N.M., Kim C., Choi C., Zhang X., Choi H.-K., Zhang Y., Wang H., Kong L., Afeefah N.N., Ansari M.N.M., Park J., Lee K., Yeom G.Y., Kim S., Hwang J., Kong J., Bae S.-H., Shi Y., Hong S., Kong W., Kim J.

    Published 2024
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  6. 6
    Studies on the growth and characterization of rare-earth Gd-Doped InGan/Gan magnetic semiconductor heterostructures

    Studies on the growth and characterization of rare-earth Gd-Doped InGan/Gan magnetic semiconductor heterostructures by Mohd Tawil, Siti Nooraya

    Published 2011
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  7. 7
    High quality single-crystalline aluminum nitride grown using pulsed atomic-layer Epitaxy technique by MOCVD on sapphire substrate / Mohd Nazri Abd Rahman

    High quality single-crystalline aluminum nitride grown using pulsed atomic-layer Epitaxy technique by MOCVD on sapphire substrate / Mohd Nazri Abd Rahman by Mohd Nazri , Abd Rahman

    Published 2021
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  8. 8
    Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD

    Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD by Abd Rahman, Mohd Nazri, Talik, Noor Azrina, Abdul Khudus, Muhammad Imran Mustafa, Sulaiman, Abdullah Fadil, Allif, Kamarul, Zahir, Norhilmi Mohd, Shuhaimi, Ahmad

    Published 2019
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  9. 9
    Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD / Mohd Afiq Anuar

    Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD / Mohd Afiq Anuar by Mohd Afiq , Anuar

    Published 2020
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  10. 10
    Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs

    Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs by Bablu K. Ghosh, ToruTanikawa, Akihiro Hashimoto, Akio Yamamoto, Yoshifumi Ito

    Published 2003
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  11. 11
    Characteristic Enrichment of the Blue LED by MOCVD on Patterned Sapphire (0 0 0 1) Substrate

    Characteristic Enrichment of the Blue LED by MOCVD on Patterned Sapphire (0 0 0 1) Substrate by Kamarulzaman, Kamarul Alif, Ameera, Anuar, Shuhaimi, Ahmad, Hongjian, Li, Alias, Ezzah Azimah, Samsudin, Muhammad Esmed Alii, Zainal, Norzaini

    Published 2016
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  12. 12
    Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition

    Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition by Rais, Shamsul Amir Abdul, Najiha, Hayatun, Hassan, Zainuriah, Shuhaimi, Ahmad

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  13. 13
    Photoluminescence and raman scattering of GaAs1-xBix alloy

    Photoluminescence and raman scattering of GaAs1-xBix alloy by L. Hasanah, Julian, C., Mulyanti, B., Aransa, A., Sumatri, R., M.H. Johari, David, J.P.R., Abdul Rahman Mohmad

    Published 2020
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  14. 14
    XRD analyses of InxGa1-xN (0.20 x 0.80) ternary alloys

    XRD analyses of InxGa1-xN (0.20 x 0.80) ternary alloys by Yushamdan, Yusof, Muslim, A. Abid, Ng, Sha Shiong, Haslan, Abu Hassan, Zainuriah, Hassan

    Published 2010
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  15. 15
    Modelling Of Advanced Iii-V Compound Semiconductor Devices

    Modelling Of Advanced Iii-V Compound Semiconductor Devices by Rozik, Nik Nor Amirah

    Published 2017
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  16. 16
    Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template

    Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template by Makinudin, Abdullah Haaziq Ahmad, Omar, Al-Zuhairi, Anuar, Afiq, Shuhaimi, Ahmad, DenBaars, Steven P., Supangat, Azzuliani

    Published 2019
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  17. 17
    Structural properties studies of GaN on 6H-SiC by means of X-ray diffraction technique

    Structural properties studies of GaN on 6H-SiC by means of X-ray diffraction technique by C. G., Ching, S. S., Ng, Z., Hassan, H., Abu Hassan

    Published 2010
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  18. 18
    Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting

    Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting by Hairol Aman, Mohammad Amirul, Ahmad Noorden, Ahmad Fakhrurrazi, Daud, Suzairi, Abdul Kadir@Jaafar, Muhammad Zamzuri

    Published 2024
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  19. 19
    Optimization of AlN/GaN strained-layer superlattice for GaN epitaxy on Si(111) substrate / Yusnizam Yusuf

    Optimization of AlN/GaN strained-layer superlattice for GaN epitaxy on Si(111) substrate / Yusnizam Yusuf by Yusnizam, Yusuf

    Published 2017
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  20. 20
    Growth and properties of polar and non-polar InGaN/GaN LEDS on patterned and M-plane sapphire substrates / Mohd Adreen Shah Azman Shah

    Growth and properties of polar and non-polar InGaN/GaN LEDS on patterned and M-plane sapphire substrates / Mohd Adreen Shah Azman Shah by Mohd Adreen Shah , Azman Shah

    Published 2022
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