The development of BEEM modeling for the characterization of Si/Ge self-assembled quantum dot heterostructures
In this paper we present a ballistic electron emission microscopy (BEEM) modeling for the Si/Ge quantum dots characterization. BEEM is a new characterization technique by using electrons ejected from the scanning tunneling microscopy (STM) tip to investigate the metal-semiconductor interfaces. Becau...
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| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2006
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| Subjects: | |
| Online Access: | http://eprints.utm.my/7792/1/Samsudi_Bin_Sakrani_2006_The_Development_Of_BEEM_Modelling.pdf http://eprints.utm.my/7792/ http://dx.doi.org/10.1109/NANOEL.2006.1609735 |
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