Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier
Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was im...
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| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
Elsevier
2007
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| Subjects: | |
| Online Access: | http://eprints.utm.my/7627/ http://dx.doi.org/10.1016/j.mejo.2007.09.027 |
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| Summary: | Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc-connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10-40 GHz showed the conductance modulation by drain-source voltage. These results indicate the existence of plasma wave interactions. |
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