Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method
A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (n-VDGM) over a silicon pillar is revealed. This process utilizes the technique of oblique rotating ion implantation (ORI). The self-aligned region forms a sharp vertical channel profile and decreases the channel lengt...
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| Main Authors: | , |
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| Format: | Article |
| Language: | en |
| Published: |
Elsevier
2008
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| Subjects: | |
| Online Access: | http://eprints.utm.my/7517/1/Razali_Ismail_2008_Self-aligned_Verticaldouble-gateMOSFET.pdf http://eprints.utm.my/7517/ http://dx.doi.org/10.1016/j.mejo.2008.03.007 |
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