Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
In this paper, we present an experiment study of the photoluminescence properties of self-assembled In0.5sGa0.5As/GaAs quantum dots (aDs). High quality In0.5Ga0.5As aDs were grown by using Metalorganic Chemical Vapor Deposition (MOCVD). The low temperature photoluminescence (PL) spectrum of the Ino....
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2006
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| Subjects: | |
| Online Access: | http://eprints.utm.my/10834/1/YussofWahab2006_PhotolumnescenceStudiesofInGaAsGaAs.pdf http://eprints.utm.my/10834/ |
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| Summary: | In this paper, we present an experiment study of the photoluminescence properties of self-assembled In0.5sGa0.5As/GaAs quantum dots (aDs). High quality In0.5Ga0.5As aDs were grown by using Metalorganic Chemical Vapor Deposition (MOCVD). The low temperature photoluminescence (PL) spectrum of the Ino.sGao:As quantum dots surrounded by GaAs exhibit an emission peak at 1.137 to 1.182eV and a narrow linewidth (FWHM). The PL peak energy and intensity are varied with the excitation powers. Room temperature PL shows slightly lower peak energy with a broader spectrum linewidth. The distribution of the peak energy, peak intensity, and FWHM for the whole sample was obtained by using the PL mapping method. |
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