Band anti-crossing modelling on tailored Ga1-xInxNyAs1-y band gap energy based nitrogen fraction

This paper deals with a Band Anti-Crossing (BAC) modelling to investigate the tailoring of band gap energy of Ga1-xInxNyAs1-y alloy based on nitrogen fractions. Three different numerical methods have been adopted to estimate the extended state of conduction band (

Saved in:
Bibliographic Details
Main Authors: Abd Samad, Muhammad Izzuddin, Mohamad, Khairul Anuar, Nordin, Mohammad Syahmi, Nayan, Nafarizal, Alias, Afishah, Othman, Marinah, Boland-Thoms, Adrian, Vickers, Anthony John
Format: Article
Language:en
Published: 2019
Subjects:
Online Access:http://eprints.uthm.edu.my/634/1/DNJ9631_8120f4184b38c418eab43a8c35d43960.pdf
http://eprints.uthm.edu.my/634/
https://doi.org/10.13189/ujeee.2019.061612
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper deals with a Band Anti-Crossing (BAC) modelling to investigate the tailoring of band gap energy of Ga1-xInxNyAs1-y alloy based on nitrogen fractions. Three different numerical methods have been adopted to estimate the extended state of conduction band (