Gamma ray and neutron radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 schottky diode
This research focuses on the radiation tolerance of ZnO and CuGaO2 based semiconductor application for space borne application. In this research, n-ZnO/p-CuGaO2 based semiconductor devices were fabricated and exposed to gamma rays with increasing total ionizing dose (TID) and neutron fluence at diff...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | en |
| Published: |
IOP Publishing
2020
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| Subjects: | |
| Online Access: | http://eprints.uthm.edu.my/6317/1/AJ%202020%20%28276%29.pdf http://eprints.uthm.edu.my/6317/ https://dx.doi.org/10.1149/2162-8777/ab8f19 |
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