NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation
Fabrication of ultra shallow junctions with low contact resistances is desired to advance current CMOS technology. The low Boron activation on Group V for ultra shallow junction formation will makes the chip fabrication works effectively. Silvaco TCAD (Technology Computer Aided Design)manages simula...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | en |
| Published: |
Trans Tech Publications
2013
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/8518/1/AMR.716.248.pdf http://eprints.utem.edu.my/id/eprint/8518/ |
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