Thermal analysis and switching performance of a 1.7 kV SiC power MOSFET under high-frequency operation and double pulse testing

This study presents a comprehensive simulation analysis of 1.7 kV SiC Power MOSFETs (SiC) compared to conventional Si power MOSFETs (Si1 and Si2) focusing on thermal behavior, switching performance, and efficiency under various operating conditions. LTspice simulations over 5000 switching cycles rev...

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Bibliographic Details

Main Authors:	Arith, Faiz, Mohd Seth, Muhammad Najmi, Zulkifle, Nurul Amirah, Noorasid, Nur Syamimi, Omar, Ghazali, Muhammad Mustafa, Ahmad Nizamuddin
Format:	Article
Language:	en
Published:	Institute Of Electrical And Electronics Engineers Inc. 2025
Online Access:	http://eprints.utem.edu.my/id/eprint/29301/2/0194112102025163747.pdf http://eprints.utem.edu.my/id/eprint/29301/ https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11184108
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