Near Ultra-Violet Electroluminescence from a ZnO Nanorods/p-GaN Heterojunction Light Emitting Diode

The heterostructure of the n-ZnO nanorod (NRs) arrays grown on the p-GaN layer was formed using lowcost hydrothermal technique in order to fabricate a light emitting diode (LED) device. Morphological, structural and optica l properties of as-prepared sample are described. The LED exhibited room temp...

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Bibliographic Details

Main Authors:	Mohammad, Sabah M., Hassan, Z., Ahmed, Naser M.
Format:	Conference or Workshop Item
Language:	en
Published:	2016
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48796/1/ZO4.pdf%20done.pdf http://eprints.usm.my/48796/
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