Properties of p-GaN Layer on Different Nitride Surfaces

Achieving high-quality p-type GaN (p-GaN) layer is crucial for development of nitrides-based optoelectronic and power devices like as light-emitting diodes (LEOs). laser, transistor and so forth. Although, nitride based devices are commonly grown on foreign substrates e.g. sapphire, growing the n...

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Bibliographic Details

Main Authors:	Fatihah, N., Zainal, N., Hassan, Z.
Format:	Conference or Workshop Item
Language:	en
Published:	2015
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/48437/1/Section%20C%20154.pdf%20cut.pdf http://eprints.usm.my/48437/
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