Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE).
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://eprints.usm.my/14830/1/paper6.pdf http://eprints.usm.my/14830/ |
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| _version_ | 1834438385139187712 |
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| author | L, S Chuah Hassan, Z Abu Hassan, H |
| author_facet | L, S Chuah Hassan, Z Abu Hassan, H |
| author_sort | L, S Chuah |
| building | Hamzah Sendut Library |
| collection | Institutional Repository |
| content_provider | Universiti Sains Malaysia |
| content_source | USM Institutional Repository |
| continent | Asia |
| country | Malaysia |
| description | High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE). |
| format | Conference or Workshop Item |
| id | my.usm.eprints.14830 |
| institution | Universiti Sains Malaysia |
| language | en |
| publishDate | 2007 |
| record_format | eprints |
| spelling | my.usm.eprints.14830 http://eprints.usm.my/14830/ Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. L, S Chuah Hassan, Z Abu Hassan, H QC1 Physics (General) High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE). 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/14830/1/paper6.pdf L, S Chuah and Hassan, Z and Abu Hassan, H (2007) Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur. |
| spellingShingle | QC1 Physics (General) L, S Chuah Hassan, Z Abu Hassan, H Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. |
| title | Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
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| title_full | Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
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| title_fullStr | Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
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| title_full_unstemmed | Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
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| title_short | Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
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| title_sort | red emission of thin film electroluminescent device based on p-gan. |
| topic | QC1 Physics (General) |
| url | http://eprints.usm.my/14830/1/paper6.pdf http://eprints.usm.my/14830/ |
| url_provider | http://eprints.usm.my/ |